“Bias dependence of PBTI degradation mechanism in metal-oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric”

Year

2011

Author

Tae-Young Jang, Dong-Hyoub Kim, Jungwoo Kim, Jun Suk Chang, Jae Kyeong Jeong, Yoon-Uk Heo, Young-Ki Kim, Changhwan Choi, Hokyung Park, Rino choi,

Volume

Microelectronic Engineering, 88, 2011

Page

1373

Status of publication

submitted